RF Modeling of Integrated RF CMOS Schottky Diodes For Rectifier Designs

摘要：

In this paper an interdigital n-type CoSi2-Si Schottky diode is fabricated in SMIC 0.13 m RF CMOS process.A p+guardring around Schottky contacts is used to reduce the leakage current at reverse biases.A novel and accurate Schottky diode model has been developed based on the DC and RF measurement data. In this novel model the losses due to parasitic capacitance dielectric and metal plate are considered. It is shown that the suggested novel model fits the measurement very well for different voltage biases over the wide frequency range of 0.1GHz to l0GHz.A type of three stages charge pump is designed using this new Schottky diode model,the design charge pump can get an efficiency of 37%.

关键词： RF CMOS Schottky diode Guardring Modeling RFID

作者: Xi-Ning Wang Li-Wu Yang Ting-Huang Lee Jian-Kun Su Bin Zhu Xiao-Fang Yao

作者单位: RF Applications,Semiconductor Manufacturing International Corporation,Shanghai 201203,P.R.China RF Applications,Semiconductor anufacturing International Corporation,Shanghai 201203,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 305-308

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）