Low resistance Ti/Al/Ni/Au Ohmic contact to (NH4)2Sz treated n-type GaN for high temperature applications
Low resistance Ti/Al/Ni/Au Ohmic contact to (NH4)2Sx treated n-type GaN has been studied in the temperature range from 25 · ·to 600· · It is found that the specific contact resistivity pc of the sample treatedwith (NH4)2Sx solution for 5 min at 90· ·decreases with increasing measuring temperature,while the ρc of thesample treated with (NH4)2Sx,solution for 25 min at 90· · increases with increasing measuring temperature. Excellent agreement with the 5min-treated sample can be obtained by the field emission model with an average Schottky barrier height (SBH) φB=1.05eV. Meanwhile,a field emission model with a temperature-dependent effective SBH is suggested to be responsible for the 25min-treated sample in which metal/semiconductor (MS) interface potential pinch-off may occur.
F.Lin B.Shen S.Huang F.J.Xu H.Y.Yang W.H.Chen N.Ma Z.X.Qin G.Y.Zhang
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,P.R.China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
726-729
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）