Metal ions drift in ultra-low K dielectrics

摘要：

Metal ions embedded in dielectric films may play an important role in the reliability of advanced interconnect systems. In this talk,we will discuss the generation and drift of different metal ions such as Cu,Ta,and Ti into the dielectric materials from gate electrodes under an external electric field at elevated temperatures. Some strategies to eliminate the generation of metal ions will also be presented.

作者: Y.Ou P.-I.Wang T.-M.Lu

作者单位: Center for Integrated Electronics Rensselaer Polytechnic Institute Troy,NY 12180

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1320-1323

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）