High Efficiency 600-mW pHEMT Distributed Power Amplifier Employing Drain Impedance Tapering Technique

摘要：

4-stage distributed power amplifier (DPA) employing tapering the drain load networks to achieve high efficiency is reported. The active device with enhancement mode pHEMT(pseudomorphic High Electron Mobility Transistor) technology is used. Measurement results of 600 roW,30 ％ of power-aided-efficiency (PAE) and gain of 10 dB is achieved within frequency range of 10-1800 MHz. Low supply voltage of 4.5 V is used for each device. Good agreement between measured and simulated results is obtained.

作者: Kumar Narendra M.F.Ain Lokesh Anand Sangaran Pragash S.I.S.Hassan V.Zhurbenko

作者单位: Research & Development Center,Motorola Technology Penang,11800,Malaysia University of Science Malaysia,Engineering Campus Penang 14300,Malaysia EleetroScience,Technical University Denmark 2800 Lyngby,Denmark

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 1769-1772

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）