A HIGH G ACCELEROMETER BASED ON SOI PIEZORESISTIVE MATERIAL WITH CANTILEVER BEAM

摘要：

A high g accelerometer based on Silicon-On-Insulator (SOI) piezoresistive material with cantilever beam is described, which can measure the acceleration up to 10 5 g. The excellent electrical and mechanical properties of SOI material may be suitable in the applications of the high-g force accelerometer as an electromechanical sensor. One kind of SOI Wheatstone bridge strain silicon gauge is developed, and the size of the SOI silicon gauge is 1.8mm×1.6mm×0.2mm. A kind of cantilever beam structure is designed to endure the impact of high-g acceleration. The SOI silicon gauge is bonded on the cantilever beam by the way of AuSn eutectic. The fabricated devices have been subjected to shock tests up to 10 5 g by using a Hopkinson’s bar, the resonance frequency of which may be up to 40 kHz. The design modeling procedures and results are reported and the fabrication steps are described.

关键词： High g Cantilever beam Piezoresistiveaccelerometers SOI

作者: Yulong Zhao Libo Zhao Jianzhong Gao Zhuangde Jiang

作者单位: Institute of Precision Engineering, Xi’an Jiaotong University, Xi’an, China

会议类型: 国际会议

会议名称: 2007年微纳系统集成及其商业化应用国际学术会议(2007 International Conference & Exhibition on Integration and Commercialization of Micro and Nano-Systems)

会议地点: 海南三亚

会议语种:英文

在线出版日期: 2007-01-10（万方平台首次上网日期，不代表论文的发表时间）