THE MECHANISM AND PROCESS OF ANODIC BONDING FOR GLASS AND ALUMINIUM
The work mainly investigates the bonding mechanism of the anodic bonding between glass and aluminium film, and bonding of multi-layers glass-Al stack is achieved by the common anode process. The SEM and EDS are applied to investigate the interfacial structure of Al-glass. The bonding area consists of glass, transitional layer and aluminium. The transitional layer is composed of Al2O3 and SiO2. The microstructure and distribution of the elements are almost the same in both sides of the Al interfaces. From the SEM micrographs a conclusion can be deduced that there is no difference between the bonding interface of the Al-glass and the glass-Al-glass. It is shown thatthe voltage and temperature are the main factors to influence the current, and the current would change a lot if the voltage or temperature is varied. According to the experimental results, if the voltage and temperature are given, the peak current of the glass-Al-glass bonding is two times larger than the Al-glass bonding. The pulling test machine (INSTRON-5544) is applied to take a tensile test for evaluation of bonding strength of the samples. And it is found that the broken occurs inside the glass not in the bonding interface. The fractures of the simples isanalyzed by SEM, and the fractures morphology of the cleavage are similar to the surface of a shell, it indicates that the glass-Al-glass wafers can be bonded very well due to the applying of a common anode. And the bonding can be achieved at 350°C -450°C by applying a voltage of 400V-800V. Using the technique, five layers of glasses to aluminium films are also bonded together.
Anodic bonding Glass Aluminium MEMS
Qingsen Meng Cuirong Liu Lifang Hui Yudeli
Department of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, P.R. Chi Department of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, P.R. Chi
国际会议
海南三亚
英文
2007-01-10（万方平台首次上网日期，不代表论文的发表时间）