MICROMACHINED PRESSURE SENSOR BASED ON GAAS/ALAS/INXGA1-XAS RESONANT TUNNELING EFFECT

摘要：

This paper reports a novel micromachined pressure sensor based on GaAs/AlAs/InxGa1-xAs resonant tunneling effect. The m m μ μ 20 20 ×GaAs/AlAs/InxGa1-xAs resonant tunneling structure (RTS) is incorporated in a 7 m μ -thick, 740 m μ –diameter GaAs circular membrane and the fabrication technology of the membrane is based upon the micromachined control holes technology. The pressure sensor is packagedhermetically, and the experimental results show that the current-voltage characteristic of RTS is a function of the external pressure, and the resonance peak voltage is linearly dependent on the pressure, the linear sensitivity is up to 0.37mV/Kpa.

关键词： Micromachined sensors RTS Resonant Tunneling Effect

作者: Wendong Zhang Jian Wang Chenyang Xue Jijun Xiong Jun Liu Zhaomin Tong

作者单位: National Key Laboratory For Electronic Measurement Technology, North University of China,Taiyuan, Shanxi, 030051, China

会议类型: 国际会议

会议名称: 2007年微纳系统集成及其商业化应用国际学术会议(2007 International Conference & Exhibition on Integration and Commercialization of Micro and Nano-Systems)

会议地点: 海南三亚

会议语种:英文

在线出版日期: 2007-01-10（万方平台首次上网日期，不代表论文的发表时间）